Ultra-Low Noise InP HEMTs for Cryogenic Amplification
نویسنده
چکیده
iii List of appended papers v
منابع مشابه
Noise Performance of a Cryogenically Cooled 94 GHz InP MMIC Amplifier and Radiometer
We have developed an ultra-low noise 94 GHz MMIC amplifier using InGaAsfInAlAsfInP transistor technology. The MMIC designs incorporate a single transistor stage with input and output matching networks as well as gate and drain bias networks. Two MMICs have been incorporated into a single housing providing 10 dB of gain. At room temperature, the integrated amplifier has a measured noise of 365 K...
متن کاملEnhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview
Enhanced performances of 111-V field effects transistors are generally expected at cryogenic temperatures thanks to the better confinement and the velocity of carriers. An overview of our recent work on ultrashort gate-length HEMTs on GaAs and InP substrates at low temperature is presented in this paper. The compared behavior of the devices and the relative enhancement or degradation of their l...
متن کاملOn-Wafer, Cryogenic Characterization of Ultra-Low Noise HEMT Devices
Significant advances in the development of high electron-mobility field-effect transistors (HEMTs) have resulted in cryogenic, low-noise amplifiers (LNAs) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting–insulator– supercon...
متن کاملCryogenic Ultra-Low Noise InP High Electron Mobility Transistors
iii List of publications v Notations and abbreviations vii
متن کاملLow-Noise Amplification, Detection and Spectroscopy of Ultra-Cold Systems in RF Cavities
The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 4 GHz spectrum of frequencies (the “L” and “S” microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed...
متن کامل